Effects of Varying Copper (Cu) Ion Concentrations of Ternary Compound of Copper Iron Sulfide (Cufes) Thin Films

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Author(s) B. I. Obasi | J. C. Osuwa | D. A. Odu
Pages 369-373
Volume 5
Issue 8
Date August, 2016
Keywords Copper Iron Sulfide, Energy Band Gap, Molar Concentrations, Photon Energy, Ternary
Abstract

Ternary thin films of copper iron sulfide (CuFeS) were prepared by chemical bath deposition (CBD) technique at room temperature (300 K) with varying molar concentrations of copper (Cu) ions (0.02, 0.04 and 0.06 M). The thin films were characterized using spectrophotometer, scanning electron microscope (SEM), X-ray diffraction (XRD) and the four-point probe. The results suggest that the films are of mono-crystal structures, with single XRD peaks broadened by higher copper ion concentrations indicating smaller crystallite sizes. The absorbance, transmittance, absorption coefficient and some other properties such as refractive index and dielectric constants of the films show appreciable change for copper ion concentration of 0.04 M or greater. The refractive index for instance, changed from 1.68 for 0.02-0.04 M of Cu ions to 2.0 for 0.06 M of Cu ion concentration at photon energy of 1.5 eV. However, the energy band gaps for both direct and indirect transitions decreased with increase in Cu ion concentration ranging from 2.56-2.75 eV and 1.8-2.25 eV respectively. In addition, both the absorption coefficient and imaginary dielectric constant possess peak values in the visible range of the spectrum for all Cu ion concentrations. Also reported in this paper are the electrical properties.

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